• COS Encapsulated Semiconductor Laser.png
    COS Encapsulated Semiconductor Laser
  • COS Encapsulated Semiconductor Laser.png

COS Encapsulated Semiconductor Laser

COS (Chip On Submount) packaging is an efficient and advanced semiconductor laser packaging technology that directly mounts laser chips onto a submount. With advantages such as high efficiency, low thermal resistance, and strong reliability, COS packaging technology has been widely adopted in industrial processing, medical equipment, telecommunications, and other fields.

  • 10W~45W
    Output Power
  • 808~1064nm
    Central Emission Wavelength
  • 6nm
    Spectral Width
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  • Product Advantages

  • Specifications

  • Related Products

Product Advantages

  • Low Thermal Resistance

    COS packaging significantly reduces thermal resistance through optimized thermal management design, improving the heat dissipation efficiency of laser chips.

  • Stability

    COS packaging delivers outstanding mechanical stability, enabling resistance to vibration and shock, ensuring reliable operation even in harsh environments.

  • Power and Wavelength Versatility

    COS offers customizable power and wavelength options to meet diverse application requirements.

Specifications

Product Model
  • 808
    cos1.png
  • 880
    cos1.png
  • 915
    cos1.png
  • 976
    cos1.png
  • Output Power(W)
  • Central Emission Wavelength(nm)
  • Threshold Current(A)
  • Operating Current(A)
  • Operating Voltage(V)
  • Vertical Far Field 95% PlB [Deg](°)
  • Lateral Far Field 95% PlB [Deg](°)
  • Slope Efficiency
  • Conversion Efficiency(%)
  • Wavelength Center (l=2A)
  • Spectral Width (FWHM)(nm)
  • Polarisation Ratio TE / (TM+TE)(%)
  • Emitter Width(μm)
  • Welding Temperature(℃)
  • Operating Temp.(℃)
  • Storage Temp.(℃)
  • Wavelength Temperature Coefficient(nm/°C)
  • Dimension(mm)
  • Weight(g)
  • 808

    cos1.png
    • Output Power(W)
      8~10
    • Central Emission Wavelength(nm)
      808
    • Threshold Current(A)
      1~1.8
    • Operating Current(A)
      8.5~11
    • Operating Voltage(V)
      1.75
    • Vertical Far Field 95% PlB [Deg](°)
      58
    • Lateral Far Field 95% PlB [Deg](°)
      11
    • Slope Efficiency
      1.1
    • Conversion Efficiency(%)
      52~54
    • Wavelength Center (l=2A)
      800~804
    • Spectral Width (FWHM)(nm)
      6
    • Polarisation Ratio TE / (TM+TE)(%)
      80
    • Emitter Width(μm)
      200~400
    • Welding Temperature(℃)
      ≤260
    • Operating Temp.(℃)
      15~40
    • Storage Temp.(℃)
      0~70
    • Wavelength Temperature Coefficient(nm/°C)
      0.3
    • Dimension(mm)
      4.8×4.05×0.456 / 4.5×5.7×0.5
    • Weight(g)
      <1
  • 880

    cos1.png
    • Output Power(W)
      10~15
    • Central Emission Wavelength(nm)
      878
    • Threshold Current(A)
      1.5
    • Operating Current(A)
      11~15
    • Operating Voltage(V)
      1.75
    • Vertical Far Field 95% PlB [Deg](°)
      58
    • Lateral Far Field 95% PlB [Deg](°)
      11
    • Slope Efficiency
      1.1
    • Conversion Efficiency(%)
      52~57
    • Wavelength Center (l=2A)
      874~877
    • Spectral Width (FWHM)(nm)
      6
    • Polarisation Ratio TE / (TM+TE)(%)
      80
    • Emitter Width(μm)
      200~400
    • Welding Temperature(℃)
      ≤260
    • Operating Temp.(℃)
      15~40
    • Storage Temp.(℃)
      0~70
    • Wavelength Temperature Coefficient(nm/°C)
      0.3
    • Dimension(mm)
      4.8×4.05×0.456 / 4.5×5.7×0.5
    • Weight(g)
      <1
  • 915

    cos1.png
    • Output Power(W)
      12~35
    • Central Emission Wavelength(nm)
      915
    • Threshold Current(A)
      0.6~1.8
    • Operating Current(A)
      12~35
    • Operating Voltage(V)
      1.75
    • Vertical Far Field 95% PlB [Deg](°)
      58
    • Lateral Far Field 95% PlB [Deg](°)
      11
    • Slope Efficiency
      1.03
    • Conversion Efficiency(%)
      55~57
    • Wavelength Center (l=2A)
      903~915
    • Spectral Width (FWHM)(nm)
      6
    • Polarisation Ratio TE / (TM+TE)(%)
      95
    • Emitter Width(μm)
      96~230
    • Welding Temperature(℃)
      ≤260
    • Operating Temp.(℃)
      15~40
    • Storage Temp.(℃)
      0~70
    • Wavelength Temperature Coefficient(nm/°C)
      0.3
    • Dimension(mm)
      4.8×4.05×0.456 / 4.5×5.7×0.5
    • Weight(g)
      <1
  • 976

    cos1.png
    • Output Power(W)
      12~35
    • Central Emission Wavelength(nm)
      976
    • Threshold Current(A)
      0.6~1.8
    • Operating Current(A)
      12~35
    • Operating Voltage(V)
      1.75
    • Vertical Far Field 95% PlB [Deg](°)
      58
    • Lateral Far Field 95% PlB [Deg](°)
      11
    • Slope Efficiency
      1.03
    • Conversion Efficiency(%)
      55~57
    • Wavelength Center (l=2A)
      960~970
    • Spectral Width (FWHM)(nm)
      6
    • Polarisation Ratio TE / (TM+TE)(%)
      95
    • Emitter Width(μm)
      100~230
    • Welding Temperature(℃)
      ≤260
    • Operating Temp.(℃)
      15~40
    • Storage Temp.(℃)
      0~70
    • Wavelength Temperature Coefficient(nm/°C)
      0.3
    • Dimension(mm)
      4.8×4.05×0.456 / 4.5×5.7×0.5
    • Weight(g)
      <1
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