COS Encapsulated Semiconductor Laser
COS (Chip On Submount) packaging is an efficient and advanced semiconductor laser packaging technology that directly mounts laser chips onto a submount. With advantages such as high efficiency, low thermal resistance, and strong reliability, COS packaging technology has been widely adopted in industrial processing, medical equipment, telecommunications, and other fields.
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10W~45WOutput Power
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808~1064nmCentral Emission Wavelength
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6nmSpectral Width
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Product Advantages
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Specifications
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Related Products
Product Advantages
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Low Thermal Resistance
COS packaging significantly reduces thermal resistance through optimized thermal management design, improving the heat dissipation efficiency of laser chips.
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Stability
COS packaging delivers outstanding mechanical stability, enabling resistance to vibration and shock, ensuring reliable operation even in harsh environments.
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Power and Wavelength Versatility
COS offers customizable power and wavelength options to meet diverse application requirements.
Specifications
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808
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880
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915
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976
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Output Power(W)
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Central Emission Wavelength(nm)
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Threshold Current(A)
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Operating Current(A)
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Operating Voltage(V)
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Vertical Far Field 95% PlB [Deg](°)
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Lateral Far Field 95% PlB [Deg](°)
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Slope Efficiency
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Conversion Efficiency(%)
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Wavelength Center (l=2A)
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Spectral Width (FWHM)(nm)
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Polarisation Ratio TE / (TM+TE)(%)
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Emitter Width(μm)
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Welding Temperature(℃)
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Operating Temp.(℃)
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Storage Temp.(℃)
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Wavelength Temperature Coefficient(nm/°C)
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Dimension(mm)
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Weight(g)
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808
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Output Power(W)8~10
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Central Emission Wavelength(nm)808
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Threshold Current(A)1~1.8
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Operating Current(A)8.5~11
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Operating Voltage(V)1.75
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Vertical Far Field 95% PlB [Deg](°)58
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Lateral Far Field 95% PlB [Deg](°)11
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Slope Efficiency1.1
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Conversion Efficiency(%)52~54
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Wavelength Center (l=2A)800~804
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Spectral Width (FWHM)(nm)6
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Polarisation Ratio TE / (TM+TE)(%)80
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Emitter Width(μm)200~400
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Welding Temperature(℃)≤260
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Operating Temp.(℃)15~40
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Storage Temp.(℃)0~70
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Wavelength Temperature Coefficient(nm/°C)0.3
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Dimension(mm)4.8×4.05×0.456 / 4.5×5.7×0.5
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Weight(g)<1
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880
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Output Power(W)10~15
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Central Emission Wavelength(nm)878
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Threshold Current(A)1.5
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Operating Current(A)11~15
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Operating Voltage(V)1.75
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Vertical Far Field 95% PlB [Deg](°)58
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Lateral Far Field 95% PlB [Deg](°)11
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Slope Efficiency1.1
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Conversion Efficiency(%)52~57
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Wavelength Center (l=2A)874~877
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Spectral Width (FWHM)(nm)6
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Polarisation Ratio TE / (TM+TE)(%)80
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Emitter Width(μm)200~400
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Welding Temperature(℃)≤260
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Operating Temp.(℃)15~40
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Storage Temp.(℃)0~70
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Wavelength Temperature Coefficient(nm/°C)0.3
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Dimension(mm)4.8×4.05×0.456 / 4.5×5.7×0.5
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Weight(g)<1
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915
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Output Power(W)12~35
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Central Emission Wavelength(nm)915
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Threshold Current(A)0.6~1.8
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Operating Current(A)12~35
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Operating Voltage(V)1.75
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Vertical Far Field 95% PlB [Deg](°)58
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Lateral Far Field 95% PlB [Deg](°)11
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Slope Efficiency1.03
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Conversion Efficiency(%)55~57
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Wavelength Center (l=2A)903~915
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Spectral Width (FWHM)(nm)6
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Polarisation Ratio TE / (TM+TE)(%)95
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Emitter Width(μm)96~230
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Welding Temperature(℃)≤260
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Operating Temp.(℃)15~40
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Storage Temp.(℃)0~70
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Wavelength Temperature Coefficient(nm/°C)0.3
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Dimension(mm)4.8×4.05×0.456 / 4.5×5.7×0.5
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Weight(g)<1
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976
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Output Power(W)12~35
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Central Emission Wavelength(nm)976
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Threshold Current(A)0.6~1.8
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Operating Current(A)12~35
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Operating Voltage(V)1.75
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Vertical Far Field 95% PlB [Deg](°)58
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Lateral Far Field 95% PlB [Deg](°)11
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Slope Efficiency1.03
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Conversion Efficiency(%)55~57
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Wavelength Center (l=2A)960~970
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Spectral Width (FWHM)(nm)6
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Polarisation Ratio TE / (TM+TE)(%)95
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Emitter Width(μm)100~230
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Welding Temperature(℃)≤260
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Operating Temp.(℃)15~40
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Storage Temp.(℃)0~70
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Wavelength Temperature Coefficient(nm/°C)0.3
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Dimension(mm)4.8×4.05×0.456 / 4.5×5.7×0.5
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Weight(g)<1
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