880nm Semiconductor Laser
The 880nm series semiconductor laser is a high-efficiency laser device operating in the near-infrared (NIR) spectrum, featuring excellent stability, high conversion efficiency, and broad application versatility. This laser system finds extensive applications across multiple fields including medical treatments, industrial processing, scientific research, and telecommunications.
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8W~120WOutput Power
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878.6nmCentral Emission Wavelength
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0.5nmSpectral Width
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Product Advantages
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Applications
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Specification
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Related Products
Product Advantages
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High Conversion Efficiency
Utilizing advanced semiconductor fabrication processes to achieve superior electro-optic conversion efficiency, reducing power consumption while delivering high output power.
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Outstanding Wavelength Characteristics
The 880nm wavelength offers excellent tissue penetration capability, making it ideal for various medical and aesthetic applications.
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High Power Output
Delivering power output ranging from several watts to tens of watts, with customizable options for different application requirements.
Applications
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Solid-State Laser Pump Source
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Solid-State Laser Pump Source
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Solid-State Laser Pump Source
Specification
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880-8W
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880-30W
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880-65W
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880-120W
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Output Power(W)
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Central Emission Wavelength(nm)
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Spectral Width (Fwhm)(nm)
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95% Power Within NA(NA)
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Anti-reflection Range(nm)
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Conversion Efficiency(%)
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Threshold Current(A)
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Operating Current(A)
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Operating Voltage(V)
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Core Diameter(μm)
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Fiber Clad Diameter(μm)
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Operating Temp.(°C)
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Storage Temp.(°C)
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Wavelength Temperature Coefficient(nm/°C)
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Dimension(mm)
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Weight(g)
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880-8W
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Output Power(W)8
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Central Emission Wavelength(nm)878.6
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Spectral Width (Fwhm)(nm)0.5
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95% Power Within NA(NA)0.2
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Anti-reflection Range(nm)1040~1200
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Conversion Efficiency(%)50
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Threshold Current(A)1.8
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Operating Current(A)12
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Operating Voltage(V)1.8
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Core Diameter(μm)400
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Fiber Clad Diameter(μm)440
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Operating Temp.(°C)15~40
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Storage Temp.(°C)-20~85
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Wavelength Temperature Coefficient(nm/°C)0.03
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Dimension(mm)62.5×29×10.02
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Weight(g)≈40
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880-30W
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Output Power(W)30
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Central Emission Wavelength(nm)878.6
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Spectral Width (Fwhm)(nm)0.5
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95% Power Within NA(NA)0.2
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Anti-reflection Range(nm)1040~1200
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Conversion Efficiency(%)50
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Threshold Current(A)1.8
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Operating Current(A)12
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Operating Voltage(V)6.8
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Core Diameter(μm)400
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Fiber Clad Diameter(μm)440
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Operating Temp.(°C)15~40
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Storage Temp.(°C)-20~85
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Wavelength Temperature Coefficient(nm/°C)0.03
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Dimension(mm)77×38.5×10.95
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Weight(g)≈92
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880-65W
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Output Power(W)65
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Central Emission Wavelength(nm)878.6
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Spectral Width (Fwhm)(nm)0.5
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95% Power Within NA(NA)0.2
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Anti-reflection Range(nm)1040~1200
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Conversion Efficiency(%)50
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Threshold Current(A)1.8
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Operating Current(A)12
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Operating Voltage(V)14.5
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Core Diameter(μm)400
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Fiber Clad Diameter(μm)440
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Operating Temp.(°C)15~40
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Storage Temp.(°C)-20~85
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Wavelength Temperature Coefficient(nm/°C)0.03
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Dimension(mm)119.5×48×17
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Weight(g)≈310
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880-120W
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Output Power(W)120
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Central Emission Wavelength(nm)878.6
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Spectral Width (Fwhm)(nm)0.5
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95% Power Within NA(NA)0.2
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Anti-reflection Range(nm)1040~1200
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Conversion Efficiency(%)50
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Threshold Current(A)1.8
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Operating Current(A)12
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Operating Voltage(V)21.5
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Core Diameter(μm)400
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Fiber Clad Diameter(μm)440
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Operating Temp.(°C)15~40
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Storage Temp.(°C)-20~85
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Wavelength Temperature Coefficient(nm/°C)0.03
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Dimension(mm)163.5×48.5×20.65
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Weight(g)≈638
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