30W-200W Semiconductor Laser
30W/50W/200W PL inspection is a non-contact detection method based on optical excitation and high-sensitivity camera imaging, widely used for quality inspection of silicon wafers, solar cells, and other semiconductor materials.
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30/50/200WOutput Power
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808±5/915±10nmCentral Emission Wavelength
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10nmSpectral Width
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Product Advantages
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Specification
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Related Products
Product Advantages
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Non-Contact Inspection
The PL method ensures zero physical damage or contamination to silicon wafers, preserving sample integrity during inspection.
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High Sensitivity
Capable of detecting micron- and even nano-scale defects and impurities, with significantly higher sensitivity than conventional inspection methods.
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High Throughput
Enables rapid processing of large sample volumes, dramatically improving production efficiency and quality control performance.
Specification
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JPT-30W
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JPT-50W
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JPT-200W
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Output Power（W）
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Central Wavelength（nm）
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Center Wavelength Deviation
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Typical Working Distance（mm）
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Detectable Wafer Size（mm）
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Power Requirements（V）
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IO Interface（V）
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Average Power Consumption（W）
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Beam Emission Control
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Power Regulation Mode
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Operating Temp.&Rh（℃）
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Dimension（mm）
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Weight（kg）
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Applicable Technology
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Cooling
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JPT-30W
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Output Power（W）30
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Central Wavelength（nm）808
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Center Wavelength Deviation±5
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Typical Working Distance（mm）230~260
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Detectable Wafer Size（mm）≤230
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Power Requirements（V）220
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IO Interface（V）White 0~24+/ Black 0~0.5-
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Average Power Consumption（W）100
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Beam Emission ControlIO Interface
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Power Regulation ModeGUI
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Operating Temp.&Rh（℃）20~30；＜80%
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Dimension（mm）205×111×123
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Weight（kg）≈4
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Applicable TechnologyProcess After Silicon Wafer Coating
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CoolingAir-Cooled
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JPT-50W
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Output Power（W）50
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Central Wavelength（nm）808
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Center Wavelength Deviation±5
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Typical Working Distance（mm）230~260
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Detectable Wafer Size（mm）≤230
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Power Requirements（V）220
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IO Interface（V）White 0~24+/ Black 0~0.5-
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Average Power Consumption（W）130
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Beam Emission ControlIO Interface
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Power Regulation ModeGUI
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Operating Temp.&Rh（℃）20~30；＜80%
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Dimension（mm）232×140×122
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Weight（kg）≈5
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Applicable TechnologyProcess After Silicon Wafer Diffusion
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CoolingAir-Cooled
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JPT-200W
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Output Power（W）200
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Central Wavelength（nm）915
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Center Wavelength Deviation±10
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Typical Working Distance（mm）230~260
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Detectable Wafer Size（mm）≤230
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Power Requirements（V）220
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IO Interface（V）White 0~24+/ Black 0~0.5-
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Average Power Consumption（W）560
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Beam Emission ControlIO Interface
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Power Regulation ModeGUI
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Operating Temp.&Rh（℃）20~30；＜80%
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Dimension（mm）450×235×70
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Weight（kg）≈10
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Applicable TechnologySubsequent Processes of Silicon Wafers
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CoolingWater-Cooled
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