• 808nm Semiconductor Laser.png
  • 808nm Semiconductor Laser.png
  • 808nm Semiconductor Laser.png
  • 808nm Semiconductor Laser.png
  • 808nm Semiconductor Laser.png
  • 808nm Semiconductor Laser.png

808nm Semiconductor Laser

The 808nm series semiconductor laser is a high-efficiency, high-stability laser device operating in the near-infrared (NIR) spectrum. Due to its unique optical characteristics, the 808nm wavelength is widely used in medical treatments, aesthetic procedures, industrial processing, and scientific research applications.

  • 8W~50W
    Output Power
  • 808±5nm
    Central Emission Wavelength
  • 6nm
    Spectral Width
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  • Product Advantages

  • Applications

  • Specification

  • Related Products

Product Advantages

  • High Conversion Efficiency

    The advanced semiconductor technology enables the 808nm laser to achieve exceptional electro-optic conversion efficiency, significantly reducing energy loss.

  • Superior Wavelength Characteristics

    The 808nm wavelength demonstrates excellent transmittance in biological tissues, making it particularly suitable for medical and aesthetic applications.

  • High Output Power

    Capable of delivering output power ranging up to several watts or even tens of watts to meet various high-intensity application requirements.

Applications

  • underlay image Lark-3ASE(内部移除).png
    Solid-State Laser Pump Source
  • underlay image 固体激光器泵源2.png
    Solid-State Laser Pump Source
  • underlay image 固体激光器泵源.png
    Solid-State Laser Pump Source

Specification

Product Model
  • 808-8W
    808nm1.png
  • 808-16W
    808nm2.png
  • 808-25W
    808nm3.png
  • 808-50W
    808nm1.png
  • Output Power(W)
  • Central Emission Wavelength(nm)
  • Spectral Width (Fwhm)(nm)
  • 95% Power Within NA(NA)
  • Anti-reflection Range(nm)
  • Conversion Efficiency(%)
  • Threshold Current(A)
  • Operating Current(A)
  • Operating Voltage(V)
  • Core Diameter(μm)
  • Fiber Clad Diameter(μm)
  • Operating Temp.(°C)
  • Storage Temp.(°C)
  • Wavelength Temperature Coefficient(nm/°C)
  • Dimension(mm)
  • Weight(g)
  • 808-8W

    808nm1.png
    • Output Power(W)
      8
    • Central Emission Wavelength(nm)
      808
    • Spectral Width (Fwhm)(nm)
      6
    • 95% Power Within NA(NA)
      0.2
    • Anti-reflection Range(nm)
      1040~1200
    • Conversion Efficiency(%)
      50
    • Threshold Current(A)
      1.8
    • Operating Current(A)
      12
    • Operating Voltage(V)
      1.8
    • Core Diameter(μm)
      400
    • Fiber Clad Diameter(μm)
      440
    • Operating Temp.(°C)
      15~40
    • Storage Temp.(°C)
      -20~85
    • Wavelength Temperature Coefficient(nm/°C)
      0.3
    • Dimension(mm)
      62.5×29×10.02
    • Weight(g)
      ≈40
  • 808-16W

    808nm2.png
    • Output Power(W)
      16
    • Central Emission Wavelength(nm)
      808
    • Spectral Width (Fwhm)(nm)
      6
    • 95% Power Within NA(NA)
      0.2
    • Anti-reflection Range(nm)
      1040~1200
    • Conversion Efficiency(%)
      50
    • Threshold Current(A)
      1.8
    • Operating Current(A)
      12
    • Operating Voltage(V)
      3.6
    • Core Diameter(μm)
      400
    • Fiber Clad Diameter(μm)
      440
    • Operating Temp.(°C)
      15~40
    • Storage Temp.(°C)
      -20~85
    • Wavelength Temperature Coefficient(nm/°C)
      0.3
    • Dimension(mm)
      71×42×11.02
    • Weight(g)
      ≈87.8
  • 808-25W

    808nm3.png
    • Output Power(W)
      25
    • Central Emission Wavelength(nm)
      808
    • Spectral Width (Fwhm)(nm)
      6
    • 95% Power Within NA(NA)
      0.2
    • Anti-reflection Range(nm)
      1040~1200
    • Conversion Efficiency(%)
      50
    • Threshold Current(A)
      1.8
    • Operating Current(A)
      12
    • Operating Voltage(V)
      5.4
    • Core Diameter(μm)
      400
    • Fiber Clad Diameter(μm)
      440
    • Operating Temp.(°C)
      15~40
    • Storage Temp.(°C)
      -20~85
    • Wavelength Temperature Coefficient(nm/°C)
      0.3
    • Dimension(mm)
      77×38.5×10.95
    • Weight(g)
      ≈92
  • 808-50W

    808nm1.png
    • Output Power(W)
      50
    • Central Emission Wavelength(nm)
      808
    • Spectral Width (Fwhm)(nm)
      6
    • 95% Power Within NA(NA)
      0.2
    • Anti-reflection Range(nm)
      1040~1200
    • Conversion Efficiency(%)
      50
    • Threshold Current(A)
      1.8
    • Operating Current(A)
      12
    • Operating Voltage(V)
      14.5
    • Core Diameter(μm)
      400
    • Fiber Clad Diameter(μm)
      440
    • Operating Temp.(°C)
      15~40
    • Storage Temp.(°C)
      -20~85
    • Wavelength Temperature Coefficient(nm/°C)
      0.3
    • Dimension(mm)
      122.5×48×17
    • Weight(g)
      ≈310
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