808nm Semiconductor Laser
The 808nm series semiconductor laser is a high-efficiency, high-stability laser device operating in the near-infrared (NIR) spectrum. Due to its unique optical characteristics, the 808nm wavelength is widely used in medical treatments, aesthetic procedures, industrial processing, and scientific research applications.
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8W~50WOutput Power
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808±5nmCentral Emission Wavelength
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6nmSpectral Width
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Product Advantages
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Applications
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Specification
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Related Products
Product Advantages
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High Conversion Efficiency
The advanced semiconductor technology enables the 808nm laser to achieve exceptional electro-optic conversion efficiency, significantly reducing energy loss.
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Superior Wavelength Characteristics
The 808nm wavelength demonstrates excellent transmittance in biological tissues, making it particularly suitable for medical and aesthetic applications.
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High Output Power
Capable of delivering output power ranging up to several watts or even tens of watts to meet various high-intensity application requirements.
Applications
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Solid-State Laser Pump Source
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Solid-State Laser Pump Source
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Solid-State Laser Pump Source
Specification
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808-8W
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808-16W
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808-25W
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808-50W
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Output Power(W)
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Central Emission Wavelength(nm)
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Spectral Width (Fwhm)(nm)
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95% Power Within NA(NA)
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Anti-reflection Range(nm)
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Conversion Efficiency(%)
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Threshold Current(A)
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Operating Current(A)
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Operating Voltage(V)
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Core Diameter(μm)
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Fiber Clad Diameter(μm)
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Operating Temp.(°C)
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Storage Temp.(°C)
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Wavelength Temperature Coefficient(nm/°C)
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Dimension(mm)
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Weight(g)
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808-8W
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Output Power(W)8
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Central Emission Wavelength(nm)808
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Spectral Width (Fwhm)(nm)6
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95% Power Within NA(NA)0.2
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Anti-reflection Range(nm)1040~1200
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Conversion Efficiency(%)50
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Threshold Current(A)1.8
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Operating Current(A)12
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Operating Voltage(V)1.8
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Core Diameter(μm)400
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Fiber Clad Diameter(μm)440
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Operating Temp.(°C)15~40
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Storage Temp.(°C)-20~85
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Wavelength Temperature Coefficient(nm/°C)0.3
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Dimension(mm)62.5×29×10.02
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Weight(g)≈40
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808-16W
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Output Power(W)16
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Central Emission Wavelength(nm)808
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Spectral Width (Fwhm)(nm)6
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95% Power Within NA(NA)0.2
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Anti-reflection Range(nm)1040~1200
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Conversion Efficiency(%)50
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Threshold Current(A)1.8
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Operating Current(A)12
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Operating Voltage(V)3.6
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Core Diameter(μm)400
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Fiber Clad Diameter(μm)440
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Operating Temp.(°C)15~40
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Storage Temp.(°C)-20~85
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Wavelength Temperature Coefficient(nm/°C)0.3
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Dimension(mm)71×42×11.02
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Weight(g)≈87.8
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808-25W
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Output Power(W)25
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Central Emission Wavelength(nm)808
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Spectral Width (Fwhm)(nm)6
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95% Power Within NA(NA)0.2
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Anti-reflection Range(nm)1040~1200
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Conversion Efficiency(%)50
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Threshold Current(A)1.8
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Operating Current(A)12
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Operating Voltage(V)5.4
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Core Diameter(μm)400
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Fiber Clad Diameter(μm)440
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Operating Temp.(°C)15~40
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Storage Temp.(°C)-20~85
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Wavelength Temperature Coefficient(nm/°C)0.3
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Dimension(mm)77×38.5×10.95
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Weight(g)≈92
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808-50W
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Output Power(W)50
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Central Emission Wavelength(nm)808
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Spectral Width (Fwhm)(nm)6
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95% Power Within NA(NA)0.2
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Anti-reflection Range(nm)1040~1200
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Conversion Efficiency(%)50
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Threshold Current(A)1.8
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Operating Current(A)12
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Operating Voltage(V)14.5
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Core Diameter(μm)400
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Fiber Clad Diameter(μm)440
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Operating Temp.(°C)15~40
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Storage Temp.(°C)-20~85
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Wavelength Temperature Coefficient(nm/°C)0.3
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Dimension(mm)122.5×48×17
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Weight(g)≈310
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