M7 20W-100W
M7 200W-300W
M7 500 - 1000W
M8 20 - 50W
CL2 200W-300W
CL 500W~1000W
CL 2000W
Multi-Module CW 6000W
QCW 150W/1500W
Multi-Module CW 12000W
Single-Module CW 1500W-3000W
SEAL 355-3/5
SEAL 532
LARK 355-3/5
PS IR/GR/UV Picosecond Laser
SEAL 355-10/15/20/30
Semiconductor Laser with Red Light Series 200W
450nm—100W High Power Diode Laser
10W-1064-01 Silicon Transmission Series Detection Moduler
1060nm Series
880nm Series
808nm Series
976nm Series
915nm Series
COS Encapsulated Semiconductor Laser
Laser Scriber
High Voltage Resistor Tester
Single Chip Resistor Tester
Laser Trimmer
Hybrid Trimmer
HiPA-TT Light Transmittance Tester
PCB Laser Marking System
Ghost Writer & Reader - Subsurface 2D Barcode Marking & Reading System
High Precision 2DBC Laser-marking
Comprehensive VCSEL Module tester
Comprehensive LED-PD Integrated Module Testing
Six-sided Inspection Machine
M8 120 - 300W
Product Features
100kW+ peak power
Optimized bean quality
Advanced MOPA architecture with independent pulse modulation
Application Advantages
Laser Etching
Thin Sheet Drilling
Thin Sheet Cutting
Anode and Coating Stripping
JPT M8 series lasers feature a MOPA structure with main oscillation power amplification, which supports independently adjustable pulse width and pulse frequency. While maintaining the performance of the previous series, the M8 series has been optimised in terms of peak pulse power and beam quality to maintain excellent beam quality at high power levels up to 20kW, making it particularly suitable for applications with high peak power and brightness requirements, such as glass drilling.
| Parameter Unit | Unit | MOPA | ||
| Product Model | YDFLP-120-M8-S-W-V2 | YDFLP-200-M8-S-W-V2 | YDFLP-300-M8-S-W-V2 | |
| M² | / | <1.5 | ||
| Nominal Average Output Power | W | 120 | 200 | 300 |
| Maximum Pulse Energy | mJ | 0.96mJ@12ns | 0.95mJ@12ns | 0.86mJ@12ns |
| Pulse Repetition Rate Range | kHz | 1~4000 | ||
| Pulse Width | ns | 6~200 | ||
| Output Power Instability | % | <5 | ||
| Cooling Method | / | Water Cooled | ||
| Operating Voltage | V | 48 (DC) | ||
| Nominal Power Consumption | W | 400 | 630 | 820 |
| Supply Power Demand | W | ≥ 600 | ≥ 800 | ≥ 1000 |
| Central Emission Wavelength | nm | 1064 | ||
| Emission Bandwidth @3db | nm | < 20 | ||
| Output Beam Diameter | mm | 3.0±0.5 or 10.5±1.0 | ||
| Output Power Tuning Range | % | 0~100 | ||
| Operating Temperature | ℃ | 10~40 | ||
| Laser Weight | kg | 8.35 | ||
| Dimensions (L × W × H) | mm | 411 × 205 × 90 | ||
