808nm - 30W - 400μm

Laser Diodes

808nm - 30W - 400μm
  • 808nm - 30W - 400μm
808nm - 30W - 400μm

808nm - 30W - 400μm

Key Features:


Multiple single emitter based diode laser, high reliability

1040-1200nm feedback protection


Applications:


Solid-state laser pumping

Medical applications

Material processing

JPT has different kinds of semiconductor laser components and high-power laser modules. Semiconductor laser can be widely used in pump source, industrial processing, mechanical vision, medical and many other fields. Based on the mature coupling technology solution, thermal control and packaging process, the product has the advantages of high power, high beam quality, high stability, etc., and the product wavelength covers 400nm~1000nm, which meets the special requirements of power, brightness, wavelength control, spot uniformity and so on.


Specifications

Unit

Min

Typical

Max

Optical Parameters

Output Power

W

30



Center Wavelength

nm

805

808

811

Spectral Width(FWHM)

nm


3


Back Reflection Isolation Range

nm

1040

1060

1200

Electrical Parameters

Conversion Efficiency

%


45


Threshold Current

A


1.8


Operating Current

A


10


Operating Voltage 

V



8

Slope Efficiency

W/A


3


Fiber Parameters

Core Diameter

μm


400


Numerical Aperture

NA


0.22


Fiber Length

m


1.5


Fiber Connector



SMA905


Fiber Bend Radius

mm

80



Thermal Parameters

Package Operating Temperature

15


40

Storage Temperature

-20


85

Wavelength Temperature Coefficient

nm/℃


0.3


Lead Soldering Temperature


260


Lead Soldering Time

S


10



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