M7 20W/30W
M7 60W/100W
M7 200W/350W
LP 20W/30W/50W
CL 100W/200W/300W
CW 200W/300W
CW 500W-1000W
CW 6000W
QCW 150W/1500W
CW 12000W
CW 1500W-3000W
SEAL 355
SEAL 532
LARK 355
PS IR/UV Picosecond Laser
SEAL 355-20S
Semiconductor Laser with Red Light Series 200W
450nm—100W High Power Diode Laser
10W-1064-01 Silicon Transmission Series Detection Moduler
1060nm Series
880nm Series
808nm Series
976nm Series
915nm Series
Laser Scriber
High Voltage Resistor Tester
Single Chip Resistor Tester
Laser Trimmer
Hybrid Trimmer
HiPA-TT Light Transmittance Tester
PCB Laser Marking System
Ghost Writer & Reader - Subsurface 2D Barcode Marking & Reading System
High Precision 2DBC Laser-marking
Comprehensive VCSEL Module tester
Comprehensive LED-PD Integrated Module Testing
Six-sided Inspection Machine
COS Encapsulated Semiconductor Laser
Product Description
COS encapsulated semiconductor laser
Application Advantags
230μm luminous surrace width
High polarization states can be used to polarize the beam
High stability, high reliability
JPT has different kinds of semiconductor laser components and high-power laser modules. Semiconductor laser can be widely used in pump source, industrial processing, mechanical vision, medical and many other fields. Based on the mature coupling technology solution, thermal control and packaging process, the product has the advantages of high power, high beam quality, high stability, etc., and the product wavelength covers 400nm~1000nm, which meets the special requirements of power, brightness, wavelength control, spot uniformity and so on.
808-10W Power curre & 880-15W Power curre
915-19W Power curre & 976-30W Power curre
Parameter Unit | Parameter | ||||
Product Model | 808 | 880 | 915 | 976 | Customizable |
Output Power | 8~10W | 10~15W | 12~35W | ||
Central Emission Wavelength | 808nm | 878nm | 915nm | 976nm | |
Threshold Current | 1~1.8A | 1.5A | 0.6~1.8A | ||
Operating Current | 8.5~11A | 11~15A | 12~35A | ||
Operating Voltage | 1.75V | ||||
Verrical Far Field 95% PlB [Deg] | 58° | ||||
| Lateral Far Field 95% PlB [Deg] | 11° | ||||
| Slope Efffciency | 1.1 | 1.03 | |||
| Conversion Efffciency | 52~54% | 52~57% | 55~57% | ||
| Wavelength Center (l=2A) | 800~804 | 874~877 | 903~915 | 960~970 | |
| Spectral Width (FWHM) | 6nm | ||||
Polarisation Ratio TE / (TM+TE) | 80% | 95% | |||
Emitter Width | 200~400μm | 96~230μm | 100~230μm | ||
Welding Temperature | ≤260℃ | ||||
Operating Temp. | 15°C~40°C | ||||
Storage Temp. | 0°C~70°C | ||||
Wavelength Temperature Coefffcient | 0.3nm/°C | ||||
3D Dimensions（L×W×H） | 4.8mm×4.05mm×0.456mm/4.5mm×5.7mm×0.5mm | ||||
Weight | <1g | ||||
